march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp30xxf3 (lv) overvoltage protector series tisp3072f3,tisp3082f3 low-voltage dual bidirectional thyristor overvoltage protectors device symbol sl package (top view) ion-implanted breakdown region precise and stable voltage low voltage overshoot under surge planar passivated junctions low off-state current <10 a rated for international surge wave shapes these low-voltage dual bidirectional thyristor protectors are designed to protect isdn applications against transients caused by lightning strikes and a.c. power lines. offered in two voltage variants to meet battery and protection requirements, they are guaranteed to suppress and withstand the listed international lightning surges in both polarities. transients are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. the high crowbar holding current prevents d.c. latchup as the current subsides. these monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation. how to order d package (top view) description .............................................. ul recognized component device v drm v v (bo) v 3072f3 58 72 3082f3 66 82 waveshape standard i tsp a 2/10 s gr-1089-core 80 8/20 s iec 61000-4-5 70 10/160 s fcc part 68 60 10/700 s itu-t k.20/21 fcc part 68 50 10/560 s fcc part 68 45 10/1000 s gr-1089-core 35 1 2 3 45 6 7 8 g g g g nc t r nc nc - no internal connection md1xab 1 2 3 t g r g tr sd3xaa terminals t, r and g correspond to the alternative line designators of a, b and c *rohs directive 2002/95/ec jan 27 2003 including annex * r o h s c o m p l i a n t v e r s i o n s a v a i l a b l e device package carrier tisp30xxf3 d, small-outline tape and reeled tisp30xxf3dr sl, single-in-line tube tisp30xxf3sl tisp30xxf3dr-s tisp30xxf3sl-s insert xx value corresponding to protection voltages of 72 and 82 for standard termination finish order as for lead free termination finish order as
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. electrical characteristics for the t and r terminals, t a = 25 c (unless otherwise noted) absolute maximum ratings, t a = 25 c (unless otherwise noted) tisp30xxf3 (lv) overvoltage protector series rating symbol value unit repetitive peak off-state voltage, 0 c < t a < 70 c ?3072f3 ?3082f3 v drm 58 66 v non-repetitive peak on-state pulse current (see notes 1 and 2) i ppsm a 1/2 (gas tube differential transient, 1/2 voltage wave shape) 120 2/10 (telcordia gr-1089-core, 2/10 voltage wave shape) 80 1/20 (itu-t k.22, 1.2/50 voltage wave shape, 25 ? resistor) 50 8/20 (iec 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 70 10/160 (fcc part 68, 10/160 voltage wave shape) 60 4/250 (itu-t k.20/21, 10/700 voltage wave shape, simultaneous) 55 0.2/310 (cnet i 31-24, 0.5/700 voltage wave shape) 38 5/310 (itu-t k.20/21, 10/700 voltage wave shape, single) 50 5/320 (fcc part 68, 9/720 voltage wave shape, single) 50 10/560 (fcc part 68, 10/560 voltage wave shape) 45 10/1000 (telcordia gr-1089-core, 10/1000 voltage wave shape) 35 non-repetitive peak on-state current, 0 c < t a < 70 c (see notes 1 and 3) 50 hz, 1 s d package sl package i tsm 4.3 7.1 a initial rate of rise of on-state current, linear current ramp, maximum ramp value < 38 a di t /dt 250 a/ s junction temperature t j -65 to +150 c storage temperature range t stg -65 to +150 c notes: 1. further details on surge wave shapes are contained in the applications information section. 2. initially the tisp ? must be in thermal equilibrium with 0 c march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. electrical characteristics for t and g or r and g terminals, t a = 25 c (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off- state current v d = v drm , 0 c march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. parameter measurement information tisp30xxf3 (lv) overvoltage protector series figure 1. voltage-current characteristics for any terminal pair -v i (br) v (br) v (br)m v drm i drm v d i h i t v t i tsm i tsp v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) i (br) v (br) v (br)m v drm i drm v d i d i h i t v t i tsm i tsp -i quadrant iii switching characteristic pmxxaa
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. typical characteristics - r and g or t and g terminals tisp30xxf3 (lv) overvoltage protector series figure 2. figure 3. figure 4. figure 5. t j - junction temperature - c -25 0 25 50 75 100 125 150 i d - off-state current - a 0 001 0 01 0 1 1 10 100 tc3laf v d = -50 v v d = 50 v t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized breakdown voltages 0.9 1.0 1.1 1.2 tc3lai v (bo) v (br) v (br)m positive polarity normalized to v (br) i (br) = 100 a and 25 c t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized breakdown voltages 0.9 1.0 1.1 1.2 tc3laj v (bo) v (br) v (br)m negative polarity normalized to v (br) i (br) = 100 a and 25 c v t - on-state voltage - v 23456789 11 0 i t - on-state current - a 1 10 100 tc3lal -40 c 150 c 25 c off-state current vs junction temperature normalized breakdown voltages vs junction temperature normalized breakdown voltages vs junction temperature on-state current vs on-state voltage
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp30xxf3 (lv) overvoltage protector series typical characteristics - r and g or t and g terminals figure 6. figure 7. figure 8. figure 9. t j - junction temperature - c -25 0 25 50 75 100 125 150 i h , i (bo) - holding current, breakover current - a 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 1.0 tc3lah i (bo) i h di/dt - rate of rise of principle current - a/ s 0 001 0 01 0 1 1 10 100 normalized breakover voltage 1.0 1.1 1.2 1.3 tc3lab positive negative terminal voltage - v 0 1 1 10 off-state capacitance - pf 10 100 tc3lae 50 positive bias negative bias t j - junction temperature - c -25 0 25 50 75 100 125 150 off-state capacitance - pf 10 100 tc3lad 500 terminal bias = 0 terminal bias = 50 v terminal bias = -50 v holding current & breakover current vs junction temperature normalized breakover voltage vs rate of rise of principle current off-state capacitance vs terminal voltage off-state capacitance vs junction temperature
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. typical characteristics - r and g or t and g terminals figure 10. decay time - s 10 100 1000 maximum surge current - a 10 100 1000 tc3laa 2 surge current vs decay time tisp30xxf3 (lv) overvoltage protector series
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp30xxf3 (lv) overvoltage protector series typical characteristics - r and t terminals figure 11. figure 12. figure 13. figure 14. t j - junction temperature - c -25 0 25 50 75 100 125 150 i d - off-state current - a 0 001 0 01 0 1 1 10 100 tc3lag v d = 50 v t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized breakdown voltages 0.9 1.0 1.1 1.2 tc3lak v (bo) v (br) v (br)m both polarities normalized to v (br) i (br) = 100 a and 25 c di/dt - rate of rise of principle current - a/ s 0 001 0 01 0 1 1 10 100 normalized breakover voltage 1.0 1.1 1.2 1.3 tc3lac terminal voltage - v 0 1 1 10 off-state capacitance - ff 20 30 40 50 60 70 80 90 10 100 tc3xaa 50 d package sl package both voltage polarities off-state current vs junction temperature normalized breakdown voltages vs junction temperature normalized breakdown voltages vs rate of rise of principal current off-state capacitance vs terminal voltage
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. thermal information tisp30xxf3 (lv) overvoltage protector series figure 15. figure 16. t - current duration - s 01 1 10 100 1000 i trms - maximum non-recurrent 50 hz current - a 1 10 d package sl package ti3laa v gen = 250 vrms r gen = 10 to 150 ?
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. the electrical characteristics of a tisp device are strongly dependent on junction temperature, t j . hence, a characteristic value will depend on the junction temperature at the instant of measurement. the values given in this data sheet were measured on commercial test ers, which generally minimize the temperature rise caused by testing. application values may be calculated from the parameters? temperatur e coefficient, the power dissipated and the thermal response curve, z ? ?
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. the protection voltage, (v (bo) ), increases under lightning surge conditions due to thyristor regeneration. this increase is dependent on the rate of current rise, di/dt, when the tisp device is clamping the voltage in its breakdown region. the v (bo) value under surge conditions can be estimated by multiplying the 50 hz rate v (bo) (250 v/ms) value by the normalized increase at the surge?s di/dt (figure 7). an estimate of the di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance. as an example, the itu-t k.21 1.5 kv, 10/700 s surge has an average dv/dt of 150 v/ s, but, as the rise is exponential, the initial dv/dt is higher, being in the region of 450 v/ s. the instantaneous generator output resistance is 25 ? ? ?
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. figure 18 shows a three terminal tisp device with its equivalent delta capacitance. each capacitance, c tg , c rg and c tr , is the true terminal pair capacitance measured with a three terminal or guarded capacitance bridge. if wire r is biased at a larger potenti al than wire t, then c tg >c rg . capacitance c tg is equivalent to a capacitance of c rg in parallel with the capacitive difference of (c tg -c rg ). the line capacitive unbalance is due to (c tg -c rg ) and the capacitance shunting the line is c tr +c rg /2. all capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitiv e unbalance effects. simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via the third terminal is included. applications information tisp30xxf3 (lv) overvoltage protector series longitudinal balance figure 18. c tg c rg c tr equipment t r g (c tg -c rg ) c rg c tr equipment t r g c rg c tg > c rg equivalent unbalance aixxab tisp is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. bourns is a registered trademark of bourns, inc. in the u.s. and other countries.
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